Form-birefringence structure fabrication in GaAs by use of SU-8 as a dry-etching mask.
نویسندگان
چکیده
A thin layer of a SU-8 submicrometer pattern produced by holographic lithography was directly used as the dry-etching mask in a chemically assisted ion-beam-etching system. With optimized etching parameters, etching selectivity of 7:1 was achieved together with a smooth vertical profile. As an application, a half-wavelength retardation plate for a 1.55-microm wavelength was produced and evaluated.
منابع مشابه
Fabrication of optical structures using SU-8 photoresist and chemically assisted ion beam etching
Lin Pang Wataru Nakagawa Yeshaiahu Fainman University of California, San Diego Department of Electrical and Computer Engineering 9500 Gilman Drive La Jolla, California 92093-0407 E-mail: [email protected] Abstract. We develop a method for the fabrication of optical structures in GaAs substrates using UV holographic lithography in SU-8 resist, processed to fabricate a mask, followed by chemical...
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ورودعنوان ژورنال:
- Applied optics
دوره 44 12 شماره
صفحات -
تاریخ انتشار 2005